Thermal Memory: A Storage of Phononic Information
نویسندگان
چکیده
منابع مشابه
Thermal conductivity reduction in phononic nanomesh structures
Device Fabrication All devices were prepared on silicon-on-insulator (SOI; Soitec Inc.) wafers. The SOI wafers were pre-doped by thermally diffusing spin-on-dopant (Boron A; Filmtronics, Inc.) with rapid thermal annealing (RTA) at 820C for 3 minutes. The resulting sheet resistance indicates a doping concentration of 2x10 cm, with the thickness of the silicon epilayer determined by atomic force...
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ژورنال
عنوان ژورنال: Physical Review Letters
سال: 2008
ISSN: 0031-9007,1079-7114
DOI: 10.1103/physrevlett.101.267203